?2009 fairchild semiconductor corporation 1 www.fairchildsemi.com FGA50N100BNTD2 rev. c0 FGA50N100BNTD2 1000 v npt trench igbt april 2013 absolute maximum ratings notes: 1: repetitive rating : pulse width limited by max. junction temperature thermal characteristics symbol description ratings unit v ces collector to emitter voltage 1000 v v ges gate to emitter voltage 25 v i c collector current @ t c = 25 o c 50 a collector current @ t c = 100 o c 35 a i cm (1) pulsed collector current 200 a i f diode continuous forward current @ t c = 100 o c 15 a i fm diode maximum forward current 150 a p d maximum power dissipation @ t c = 25 o c 156 w maximum power dissipation @ t c = 100 o c 63 w t j operating junction temperature -55 to +150 o c t stg storage temperature range -55 to +150 o c t l maximum lead temp. for soldering purposes, 1/8 from case for 5 seconds 300 o c symbol parameter typ. max. unit r jc (igbt) thermal resistance, junction to case - 0.8 o c / w r jc (diode) thermal resistance, junction to case - 1.2 o c / w r ja thermal resistance, junction to ambient - 40.0 o c / w g e c g c e to-3p FGA50N100BNTD2 1000 v npt trench igbt features ? high speed switching ? low saturation voltage : v ce(sat) = 2.5 v @ i c = 60 a ? high input impedance ? built-in fast recovery diode ? rohs compliant applications ? ups, welder general description using fairchild ? 's proprietary trench design and advanced npt technology, the 1000v npt igbt offers superior cond uction and switching performances, high avalanche ruggedne ss and easy parallel operation. this device offers the opt imum perfor- mance for hard switching application such as ups, w elder applications.
FGA50N100BNTD2 1000 v npt trench igbt ?2009 fairchild semiconductor corporation 2 www.fairchildsemi.com FGA50N100BNTD2 rev. c0 package marking and ordering information electrical characteristics of the igbt t c = 25c unless otherwise noted device marking device package packaging type qty per tube max qty per box FGA50N100BNTD2 FGA50N100BNTD2 to-3pn rail / tube 30ea - symbol parameter test conditions min. typ. max. unit off characteristics bv ces collector to emitter breakdown voltage v ge = 0v, i c = 1ma 1000 - - v i ces collector cut-off current v ce = 1000v, v ge = 0v - - 1.0 ma i ges g-e leakage current v ge = 25v, v ce = 0v - - 500 na on characteristics v ge(th) g-e threshold voltage i c = 60ma, v ce = v ge 4.0 5.5 7.0 v v ce(sat) collector to emitter saturation voltage i c = 10a , v ge = 15v - 1.5 1.8 v i c = 60a , v ge = 15v 2.5 2.9 v i c = 60a , v ge = 15v, t c = 125 o c - 3.3 - v dynamic characteristics c ies input capacitance v ce = 10v , v ge = 0v, f = 1mhz - 6000 - pf c oes output capacitance - 260 - pf c res reverse transfer capacitance - 200 - pf switching characteristics t d(on) turn-on delay time v cc = 600v, i c = 60a, r g = 10 , v ge = 15v, inductive load, t c = 25 o c - 34 - ns t r rise time - 68 - ns t d(off) turn-off delay time - 243 - ns t f fall time - 65 100 ns q g total gate charge v ce = 600v, i c = 60a, v ge = 15v, t c = 25 o c - 257 350 nc q ge gate to emitter charge - 45 - nc q gc gate to collector charge - 95 - nc electrical characteristics of the diode t c = 25c unless otherwise noted v fm diode forward voltage i f = 15a - 2.9 3.2 v i f = 60a - 4.0 4.7 v t rr diode reverse recovery time i f = 60a, di/dt = 100a/us - 60 75 ns i r instantaneous reverse current v rrm = 1000v - - 2 a
FGA50N100BNTD2 1000 v npt trench igbt ?2009 fairchild semiconductor corporation 3 www.fairchildsemi.com FGA50N100BNTD2 rev. c0 typical performance characteristics figure 1. typical output characteristics figure 2. typical output characteristics figure 3. typical saturation voltage figure 4. transfer characteristics characteristics figure 5. saturation voltage vs. case figure 6. saturation voltage vs. v ge temperature at variant current leve l 0 2 4 6 8 10 0 40 80 120 160 200 7v 10v 20v t c = 25 o c 15v 9v 8v v ge = 6v collector current, i c [a] collector-emitter voltage, v ce [v] 0 2 4 6 8 10 0 40 80 120 160 200 10v 9v 20v t c = 125 o c 15v 8v 7v v ge = 6v collector current, i c [a] collector-emitter voltage, v ce [v] 0 1 2 3 4 5 6 7 0 40 80 120 160 200 common emitter v ge = 15v t c = 25 o c t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v] 2 4 6 8 10 12 0 40 80 120 160 200 common emitter v ce = 20v t c = 25 o c t c = 125 o c collector current, i c [a] gate-emitter voltage,v ge [v] 25 50 75 100 125 1.5 3.0 4.5 90a 60a 30a i c = 10a common emitter v ge = 15v collector-emitter voltage, v ce [v] collector-emittercase temperature, t c [ o c ] 1.0 0 4 8 12 16 20 0 4 8 12 16 20 30a i c = 10a 60a 90a common emitter t c = -40 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v]
FGA50N100BNTD2 1000 v npt trench igbt ?2009 fairchild semiconductor corporation 4 www.fairchildsemi.com FGA50N100BNTD2 rev. c0 typical performance characteristics figure 7. saturation voltage vs. v ge figure 8. saturation volta ge vs. v ge figure 9. capacitance characteristics figure 10. gate charge characteris tics figure 11. soa characteristics figure 12. load current vs. frequency 0 4 8 12 16 20 0 4 8 12 16 20 30a i c = 10a 60a 90a common emitter t c = 25 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v] 0 4 8 12 16 20 0 4 8 12 16 20 90a i c = 10a 60a 30a common emitter t c = 125 o c collector-emitter voltage, v ce [ v ] gate-emitter voltage, v ge [v] 0 55 110 165 220 275 0 3 6 9 12 15 common emitter t c = 25 o c 600v 400v v cc = 200v gate-emitter voltage, v ge [v] gate charge, q g [nc] 1 10 0 2000 4000 6000 8000 common emitter v ge = 0v, f = 1mhz t c = 25 o c c res c oes c ies capacitance [pf] collector-emitter voltage, v ce [v] 30 1 10 100 1000 0.01 0.1 1 10 100 3000 1ms 10 ms dc *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse 10 ? s 100 ? s collector current, i c [a] collector-emitter voltage, v ce [v] 500
FGA50N100BNTD2 1000 v npt trench igbt ?2009 fairchild semiconductor corporation 5 www.fairchildsemi.com FGA50N100BNTD2 rev. c0 typical performance characteristics figure 13. turn-on characteristics vs. figure 14. turn-off characteristics vs . gate resistance gate resistance figure 15. turn-on characteristics vs. figure 16. turn-off characteristics vs . collector current collector current figure 17. switching loss vs. gate resistance fig 18. switching loss vs. collector current 10 20 30 40 50 10 100 1000 common emitter v cc = 600v, v ge = 15v i c = 60a t c = 25 o c t c = 125 o c t d(off) t f switching time [ns] gate resistance, r g [ ? ] 2000 10 20 30 40 50 10 100 300 common emitter v cc = 600v, v ge = 15v i c = 60a t c = 25 o c t c = 125 o c t d(on) t r switching time [ns] gate resistance, r g [ ? ] 10 20 30 40 50 60 70 80 90 100 10 100 200 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 125 o c t r t d(on) switching time [ns] collector current, i c [a] 10 20 30 40 50 60 70 80 90 100 10 100 1000 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 125 o c t d(off) t f switching time [ns] collector current, i c [a] 10 20 30 40 50 1 10 common emitter v cc = 600v, v ge = 15v i c = 60a t c = 25 o c t c = 125 o c e on e off switching loss [mj] gate resistance, r g [ ? ] 50 10 20 30 40 50 60 70 80 90 100 0.1 1 10 collector current, i c [a] common emitter v cc = 600v, v ge = 15v i c = 60a t c = 25 o c t c = 125 o c e on e off switching loss [mj] 30
FGA50N100BNTD2 1000 v npt trench igbt ?2009 fairchild semiconductor corporation 6 www.fairchildsemi.com FGA50N100BNTD2 rev. c0 typical performance characteristics figure 19. turn off switching soa characterisics figure 20. forward characteristic s figure 21. reverse current figure 22. reverse rec overy characteristics vs. di/d t figure 23. reverse recovery characteristics vs. forward current 1 10 100 1000 1 10 100 3000 safe operating area v ge = 15v, t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v] 250 0 1 2 3 4 5 6 0.1 1 10 100 t j = 25 o c 200 t c = 25 o c t c = 125 o c t j = 125 o c forward voltage, v f [v] forward current, i f [a] 50 200 400 600 800 1000 1e-3 0.01 0.1 1 10 100 reverse current , i r [ ? a] reverse voltage, v r [v] t j = 125 o c t j = 25 o c 300 0 2 4 6 8 10 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 reverse recovery time, t rr [ns] di/dt[a/ ? s] i rr reverse recovery current, i rr [a] i f = 60a t c = 25 o c t rr 2 4 6 10 20 30 40 50 60 60 70 80 i rr reverse recovery time, t rr [ns] forward current,i f [a] t rr di/dt = 100a/ ? s t c = 25 o c reverse recovery current, i rr [a]
FGA50N100BNTD2 1000 v npt trench igbt ?2009 fairchild semiconductor corporation 7 www.fairchildsemi.com FGA50N100BNTD2 rev. c0 typical performance characteristics figure 24.transient thermal im pedance of igbt 1e-5 1e-4 1e-3 0.01 0.1 1 10 1e-3 0.01 0.1 1 0.01 0.02 0.1 0.05 0.2 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 t 1 p dm t 2
FGA50N100BNTD2 1000 v npt trench igbt ?2009 fairchild semiconductor corporation 8 www.fairchildsemi.com FGA50N100BNTD2 rev. c0 mechanical dimensions to-3pn
FGA50N100BNTD2 1000 v npt trench igbt ?2009 fairchild semiconductor corporation 9 www.fairchildsemi.com FGA50N100BNTD2 rev. c0 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild se miconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trade marks. *trademarks of system general corporation, used un der license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products here in to improve reliability, function, or design. fairchild does no t assume any liability arising out of the applicati on or use of any product or circuit described herein; neither does i t convey any license under its patent rights, nor t he rights of others. these specifications do not expand the terms of fai rchilds worldwide terms and conditions, specifical ly the warranty therein, which covers these products. life support policy fairchilds products are not authorized for use as critical components in life support devices or syst ems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or s ystems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the u ser. 2. a critical component in any component of a life s upport, device, or system whose failure to perform can be reasonably e xpected to cause the failure of the life support device or system, o r to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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